Vishay GA200SA60UP Manual do Utilizador descarregar pdf (Página 3)

Document Number: 94364 For technical questions, contact: ind-modules@vishay.com

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Revision: 29-Apr-08 3

GA200SA60UP

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

Vishay High Power Products

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

RMS

of Fundamental)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

0.1

f - Frequency (kHz)

Load Current (A)

1 10 100

For both:

Duty cycle: 50 %

= 125 °C

sink

= 90 °C

Gate drive as specified

Power dissipation = 140 W

Clamp voltage:

80 % of rated

Triangular wave:

120

160

200

60 % of rated

voltage

Ideal diodes

Square wave:

1000

100

0.5 1.0 1.5 2.0 2.5 3.0 3.5

- Collector to Emitter Current (A)

- Collector to Emitter Voltage (V)

= 150 °C

= 25 °C

= 15 V

20 µs pulse width

1000

100

5.0 6.0 7.0 8.0

- Collector to Emitter Current (A)

- Gate to Emitter Voltage (V)

= 150 °C

= 25 °C

= 25 V

5 µs pulse width

25 50 75 100 125 150

100

150

200

- Case Temperature (°C)

Maximum DC Collector Current (A)

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

- Junction Temperature (°C)

- Collector to Emitter Voltage (V)

= 15 V

80 µs pulse width

= 400 A

= 100 A

= 200 A

1 2 3 4 5 6 7

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